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Same model may have multiple batches, images only for reference.
SI5947DU-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI5947DU-T1-E3

Part No SI5947DU-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel
Product Status Obsolete
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 6A
Rds On (Max) @ Id, Vgs 58mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 480pF @ 10V
Power - Max 10.4W
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case PowerPAK® ChipFET™ Dual
Supplier Device Package PowerPAK® ChipFet Dual
Base Product Number SI5947
Other Names SI5947DU-T1-E3DKR,SI5947DU-T1-E3TR,SI5947DUT1E3,SI5947DU-T1-E3CT
Standard Package 3,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278485-SI5947DU-T1-E3
Ultra Librarian 3D Model Ultra Librarian SI5947DU-T1-E3 CAD Model

Description

The Vishay Siliconix TrenchFET® SI5947DU-T1-E3 is a dual P-channel MOSFET array with a logic level gate.

  • Drain-to-Source Voltage: 20V
  • Continuous Drain Current: 6A @ 25°C
  • Rds On (Max) @ Id, Vgs: 58mOhm @ 3.6A, 4.5V
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V
  • Power Rating: 10.4W
  • Operating Temperature Range: -55°C ~ 150°C (TJ)

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