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SI5975DC-T1-E3

Part No SI5975DC-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 12V 3.1A CHIPFET
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 3.1A
Maximum Rds On at Id,Vgs 86 mOhm @ 3.1A, 4.5V
Gate-Source Threshold Voltage 450mV @ 1mA (Min)
Max Gate Charge 9nC @ 4.5V
Maximum Power Dissipation 1.1W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 1206-8 ChipFET
Win Source Part Number 098332-SI5975DC-T1-E3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI5975DC-T1-E3 CAD Model

Description

The Vishay SI5975DC-T1-E3 is a dual P-channel logic level gate FET that is supplied in reels and has a medium popularity in the market. It is a surface mount integrated circuit that is packaged in a 1206-8 ChipFET case.

  • Package: 1206-8 ChipFET
  • Power Dissipation: 1.1W
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Drain-Source Breakdown Voltage: 12V
  • Continuous Drain Current @ 25°C: 3.1A
  • Popularity: Medium

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