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Same model may have multiple batches, images only for reference.
SI6415DQ-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI6415DQ-T1-GE3

Part No SI6415DQ-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 6.5A 8-TSSOP / Trans MOSFET P-CH 30V 6.5A 8-Pin TSSOP T/R
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Series TrenchFET
Packaging Reel package
Channel Type Type P
Technology MOSFET
Drain Source Voltage 30V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Vgs(th) (Maximum) @ Id 1V @ 250μA (Minimum)
Gate Charge (Qg) (Maximum) @ Vgs 70nC @ 10V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 1.5W (Ta)
Rds On (Maximum) @ Id, Vgs 19 mOhm @ 6.5A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package 8-TSSOP
Package 8-TSSOP (0.173", 4.40mm Width)
Win Source Part Number 794301-SI6415DQ-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Family Name SI6415DQ
Introduction Date April 23, 2000
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian SI6415DQ-T1-GE3 CAD Model

Description

The Vishay Siliconix SI6415DQ is a MOSFET electronic component that comes in an 8-TSSOP package.

  • Series: TrenchFET
  • Channel Type: P-channel
  • Operating Temperature: -55°C to 150°C
  • Maximum Power Dissipation: 1.5W (Ta)
  • Gate Charge (Qg): 70nC @ 10V
  • Rds On: 19 mOhm @ 6.5A, 10V
  • Drive Voltage: 4.5V and 10V
  • Maximum Vgs: ±20V
  • Category: Discrete semiconductor products
  • Packaging: Reel
  • Supply and Demand: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $3.2398 $58.3164
39+ $3.0309 $118.2051
60+ $2.9263 $175.5780
86+ $2.7173 $233.6878
111+ $2.6128 $290.0208
139+ $2.5084 $348.6676
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