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Same model may have multiple batches, images only for reference.
SI6433BDQ-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI6433BDQ-T1-E3

Part No SI6433BDQ-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 12V 4A 8-TSSOP
Datasheet
SI6433BDQ-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 15nC @ 4.5V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 1.05W (Ta)
Maximum Rds On at Id,Vgs 40 mOhm @ 4.8A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-TSSOP
Dimension 8-TSSOP (0.173", 4.40mm Width)
Win Source Part Number 137620-SI6433BDQ-T1-E3
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Industrial, Power Management
Ultra Librarian 3D Model Ultra Librarian SI6433BDQ-T1-E3 CAD Model

Description

The Vishay SI6433BDQ-T1-E3 is a P-channel MOSFET that is used in industrial power management. It has a maximum power dissipation of 1.05W (Ta) and a drain-source breakdown voltage of 12V.

  • Maximum Power Dissipation: 1.05W (Ta)
  • Drain-Source Breakdown Voltage: 12V
  • Continuous Drain Current: 4A (Ta)
  • Gate-Source Threshold Voltage: 1.5V @ 250μA
  • Maximum Gate Charge: 15nC @ 4.5V
  • Maximum Rds On @ Id,Vgs: 40 mOhm @ 4.8A, 4.5V
  • Supply and Demand Status: Balanced

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