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SI6562CDQ-T1-GE3

Part No SI6562CDQ-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description N- and P-Channel 20-V (D-S) MOSFETs
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Series TrenchFET
Packaging Reel - TR
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain Source Voltage 20V
Current - Continuous Drain (Id) @ 25°C 6.7A, 6.1A
Rds On (Maximum) @ Id, Vgs 22 mOhm @ 5.7A, 4.5V
Vgs(th) (Maximum) @ Id 1.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 23nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 850pF @ 10V
Power - Max 1.6W, 1.7W
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Package 8-TSSOP (0.173", 4.40mm Width)
Manufacturer Package 8-TSSOP
Win Source Part Number 1249365-SI6562CDQ-T1-GE3
Manufacturer Homepage www.vishay.com
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Industrial, Power Management
Ultra Librarian 3D Model Ultra Librarian SI6562CDQ-T1-GE3 CAD Model

Description

The Vishay SI6562CDQ-T1-GE3 is a power MOSFET transistor from the TrenchFET series used in power management and industrial applications.

  • Maximum Drain-Source Voltage: 20V
  • Continuous Drain Current: 6.7A and 6.1A @ 25°C
  • Package: 8-TSSOP
  • Gate-Source Threshold Voltage: 1.5V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Power Dissipation: 1.6W and 1.7W
  • Rds On: 22 mOhm @ 5.7A and 4.5V

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.7336 $51.3520
150+ $0.6872 $103.0800
230+ $0.6640 $152.7200
325+ $0.6175 $200.6875
425+ $0.5943 $252.5775
530+ $0.5711 $302.6830
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 66,000 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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