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Same model may have multiple batches, images only for reference.
SI6562DQ-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI6562DQ-T1-E3

Part No SI6562DQ-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 20V 8-TSSOP
Datasheet
SI6562DQ-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Cut Reel
Status Obsolete(EOL)
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Maximum Rds On at Id,Vgs 30 mOhm @ 4.5A, 4.5V
Gate-Source Threshold Voltage 600mV @ 250μA (Min)
Max Gate Charge 25nC @ 4.5V
Maximum Power Dissipation 1W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-TSSOP
Win Source Part Number 108356-SI6562DQ-T1-E3
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Industrial, Power Management
Ultra Librarian 3D Model Ultra Librarian SI6562DQ-T1-E3 CAD Model

Description

This Vishay electronic component is a Cut Reel packaged N and P-Channel FET type with Logic Level Gate feature.

  • Feature: Logic Level Gate
  • Type: Discrete Semiconductor Product
  • Status: Obsolete (EOL)
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Maximum Power Dissipation: 1W
  • Drain-Source Breakdown Voltage: 20V
  • Application: Industrial power management

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Pricing & Ordering

Quantity Unit Price Ext. Price
100+ $0.5960 $59.6000
240+ $0.4886 $117.2640
370+ $0.4736 $175.2320
505+ $0.4585 $231.5425
655+ $0.4435 $290.4925
875+ $0.3973 $347.6375
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,200 pieces
MOQ: 100 pcs
Order Increment : 1 pcs
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