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Same model may have multiple batches, images only for reference.
SI6562DQ-T1 Vishay
Same model may have multiple batches, images only for reference.

SI6562DQ-T1

Part No SI6562DQ-T1
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 20V 8-TSSOP
Datasheet
SI6562DQ-T1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Cut Reel
Status Obsolete(EOL)
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Maximum Rds On at Id,Vgs 30 mOhm @ 4.5A, 4.5V
Gate-Source Threshold Voltage 600mV @ 250μA (Min)
Max Gate Charge 25nC @ 4.5V
Maximum Power Dissipation 1W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-TSSOP
Win Source Part Number 093127-SI6562DQ-T1
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Application Field Used in Industrial, Power Management
Ultra Librarian 3D Model Ultra Librarian SI6562DQ-T1 CAD Model

Description

The Vishay SI6562DQ-T1 is an N and P-Channel FET type electronic component that features Logic Level Gate.

  • Feature: Logic Level Gate
  • Package: 8-TSSOP
  • Maximum Power Dissipation: 1W
  • Drain-Source Breakdown Voltage: 20V
  • Maximum Rds On @ Id,Vgs: 30 mOhm @ 4.5A, 4.5V
  • Temperature Range: -55°C to 150°C (TJ)
  • Application: Industrial power management
  • Status: Obsolete (EOL)
  • Supply and Demand Status: Limited
  • Alternative Parts: FDW2520C, Si6562DQ, and SI6562DQ-T1-GE3

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Pricing & Ordering

Quantity Unit Price Ext. Price
105+ $0.5625 $59.0625
250+ $0.4620 $115.5000
390+ $0.4470 $174.3300
535+ $0.4331 $231.7085
695+ $0.4181 $290.5795
925+ $0.3754 $347.2450
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 68,000 pieces
MOQ: 105 pcs
Order Increment : 1 pcs
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