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Same model may have multiple batches, images only for reference.
SI6966EDQ-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI6966EDQ-T1-E3

Part No SI6966EDQ-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 8TSSOP
Datasheet
SI6966EDQ-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Maximum Rds On at Id,Vgs 30 mOhm @ 5.2A, 4.5V
Gate-Source Threshold Voltage 600mV @ 250μA (Min)
Max Gate Charge 25nC @ 4.5V
Maximum Power Dissipation 1.25W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-TSSOP
Win Source Part Number 117537-SI6966EDQ-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI6966EDQ-T1-E3 CAD Model

Description

The Vishay 117537-SI6966EDQ-T1-E3 is a 2 N-Channel (Dual) FET with a Logic Level Gate, which is ideal for use in Discrete Semiconductor Products.

  • Package: Reel - TR packaged SMD (SMT)
  • Case/Package: 8-TSSOP
  • Maximum Power Dissipation: 1.25W
  • Drain-Source Breakdown Voltage: 20V
  • Gate-Source Threshold Voltage: 600mV @ 250μA (Min)
  • Maximum Rds On @ Id, Vgs: 30 mOhm @ 5.2A, 4.5V
  • Status: Obsolete (EOL)
  • Temperature Range: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.8690 $60.8300
165+ $0.7131 $117.6615
255+ $0.6908 $176.1540
350+ $0.6685 $233.9750
450+ $0.6463 $290.8350
600+ $0.5793 $347.5800
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 15,000 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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