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SI7143DP-T1-GE3

Part No SI7143DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 35A PPAK SO-8
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.8V @ 250μA
Max Gate Charge 71nC @ 10V
Max Input Capacitance 2230pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 4.2W (Ta), 35.7W (Tc)
Maximum Rds On at Id,Vgs 10 mOhm @ 16.1A, 10V
Temperature Range - Operating -50°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 1096139-SI7143DP-T1-GE3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI7143DP-T1-GE3 CAD Model

Description

This Vishay MOSFET is a P-channel polarity type with a drain-source breakdown voltage of 30V. Vishay

  • Polarity: P-channel
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current (Tc): 35A @ 25°C
  • Maximum Rds On: 10 mOhm @ 16.1A, 10V
  • Gate-Source Threshold Voltage: 2.8V @ 250μA
  • Maximum Gate-Source Voltage: ±20V
  • Max Gate Charge: 71nC @ 10V
  • Maximum Input Capacitance: 2230pF @ 15V
  • Temperature Range: -50°C to 150°C (TJ)
  • Package/Case: PowerPAK SO-8
  • Packaging: Reel-TR
  • Applications: Suitable for various applications such as power supplies, DC-DC converters, and motor control.

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $0.9891 $54.4005
125+ $0.8116 $101.4500
195+ $0.7863 $153.3285
265+ $0.7609 $201.6385
340+ $0.7355 $250.0700
455+ $0.6594 $300.0270
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 18,509 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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