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SI7153DN-T1-GE3

Part No SI7153DN-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 18A PPAK1212-8 / P-Channel 30 V 18A (Tc) 52W (Tc) Surface Mount PowerPAK? 1212-8
Datasheet
Sample
Rohs State rohs
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Vishay
Package Tape & Reel
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 9.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 93 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 3600 pF @ 15 V
Power Dissipation (Max) 52W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8
Package / Case PowerPAK® 1212-8
Base Product Number SI7153
Standard Package 3,000 pcs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 849923-SI7153DN-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SI7153DN-T1-GE3 CAD Model

Description

The SI7153DN-T1-GE3 is a P-channel MOSFET transistor. It is manufactured by Vishay.

  • Channel Type: P-Channel
  • Drain-to-Source Voltage: 30V
  • Continuous Drain Current: 18A
  • On-Resistance: 9.5mOhm @ 20A, 10V
  • Gate Charge: 93nC @ 10V
  • Mounting Type: Surface Mount
  • Package: PowerPAK 1212-8

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Pricing & Ordering

Quantity Unit Price Ext. Price
135+ $0.3799 $51.2865
325+ $0.3117 $101.3025
500+ $0.3020 $151.0000
685+ $0.2923 $200.2255
885+ $0.2825 $250.0125
1,185+ $0.2533 $300.1605
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 30,000 pieces
MOQ: 135 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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