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SI7236DP-T1-GE3 Real Image SI7236DP-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.
SI7236DP-T1-GE3 Real Image SI7236DP-T1-GE3 Real Image
SI7236DP-T1-GE3 Real Image SI7236DP-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI7236DP-T1-GE3

Part No SI7236DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 60A PPAK SO-8
Datasheet
SI7236DP-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 60A
Maximum Rds On at Id,Vgs 5.2 mOhm @ 20.7A, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 105nC @ 10V
Max Input Capacitance 4000pF @ 10V
Maximum Power Dissipation 46W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8 Dual
Win Source Part Number 139309-SI7236DP-T1-GE3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI7236DP-T1-GE3 CAD Model

Description

The Vishay SI7236DP-T1-GE3 is a high-quality dual N-channel FET that is ideal for use in electronic circuits.

  • Manufacturer: Vishay
  • Channel Type: dual N-channel FET
  • FET Feature: standard FET
  • Power Dissipation: 46W
  • Gate-Source Threshold Voltage: 1.5V @ 250μA
  • Maximum Gate Charge: 105nC @ 10V
  • Continuous Drain Current: 60A @ 25°C
  • Maximum Input Capacitance: 4000pF @ 10V
  • Supply and Demand: Limited

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