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Same model may have multiple batches, images only for reference.
SI7366DP-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI7366DP-T1-E3

Part No SI7366DP-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 13A PPAK SO-8
Datasheet
SI7366DP-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 13A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 25nC @ 4.5V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.7W (Ta)
Maximum Rds On at Id,Vgs 5.5 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 131463-SI7366DP-T1-E3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI7366DP-T1-E3 CAD Model

Description

The Vishay SI7366DP-T1-E3 is a high-quality N-channel MOSFET designed for use in a wide range of electronic applications.

  • Maximum Power Dissipation: 1.7W
  • Continuous Drain Current: 13A @ 25°C
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 25nC @ 4.5V
  • Package: PowerPAK SO-8
  • Packaging: reel
  • Popularity: popular

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Pricing & Ordering

Quantity Unit Price Ext. Price
24+ $2.5029 $60.0696
57+ $2.0536 $117.0552
88+ $1.9901 $175.1288
120+ $1.9254 $231.0480
156+ $1.8619 $290.4564
208+ $1.6690 $347.1520
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Availability: 12,849 pieces
MOQ: 24 pcs
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