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Same model may have multiple batches, images only for reference.
SI7370DP-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI7370DP-T1-E3

Part No SI7370DP-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 9.6A PPAK SO-8
Datasheet
SI7370DP-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 9.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 57nC @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.9W (Ta)
Maximum Rds On at Id,Vgs 11 mOhm @ 12A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 028627-SI7370DP-T1-E3
Popularity Medium
Supply and Demand Status Balance
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian SI7370DP-T1-E3 CAD Model

Description

The Vishay 028627-SI7370DP-T1-E3 is a N-Channel MOSFET with a drain-source breakdown voltage of 60V and a maximum continuous drain current of 9.6A at 25°C.

  • Channel Type: N-Channel MOSFET
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 9.6A @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 57nC @ 10V
  • Power Dissipation: 1.9W (Ta)
  • Package: PowerPAK SO-8
  • Mounting: SMD (SMT)
  • Drive Voltage: 6V, 10V
  • Supply and Demand Status: balanced
  • Package Quantity: 3k pcs

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Pricing & Ordering

Quantity Unit Price Ext. Price
19+ $3.1282 $59.4358
46+ $2.5666 $118.0636
70+ $2.4865 $174.0550
96+ $2.4063 $231.0048
125+ $2.3261 $290.7625
167+ $2.0855 $348.2785
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Availability: 57,000 pieces
MOQ: 19 pcs
Order Increment : 1 pcs
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