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Same model may have multiple batches, images only for reference.
SI7423DN-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI7423DN-T1-GE3

Part No SI7423DN-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 7.4A PPAK 1212-8
Datasheet
SI7423DN-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 7.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 56nC @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.5W (Ta)
Maximum Rds On at Id,Vgs 18 mOhm @ 11.7A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK 1212-8
Dimension PowerPAK 1212-8
Win Source Part Number 064564-SI7423DN-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI7423DN-T1-GE3 CAD Model

Description

The SI7423DN-T1-GE3 is a P-channel MOSFET from Vishay.

  • Mounting: Surface-mount device
  • Maximum Power Dissipation: 1.5W @ Ta
  • Supply and Demand Status: Balanced
  • Drain-Source Breakdown Voltage: 30V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On at Id,Vgs: 18 mOhm @ 11.7A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
85+ $0.7034 $59.7890
200+ $0.5775 $115.5000
310+ $0.5590 $173.2900
430+ $0.5417 $232.9310
555+ $0.5232 $290.3760
740+ $0.4689 $346.9860
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,190 pieces
MOQ: 85 pcs
Order Increment : 1 pcs
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