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SI7450DP-T1-GE3

Part No SI7450DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 200V 3.2A Automotive 8-Pin PowerPAK SO EP T/R / MOSFET N-CH 200V 3.2A PPAK SO-8
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 3.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 42nC @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.9W (Ta)
Maximum Rds On at Id,Vgs 80 mOhm @ 4A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 028644-SI7450DP-T1-GE3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Application Field Used in Industrial, Power Management, Communications & Networking, Automotive
Family Name Si7450DP
Introduction Date April 09, 2001
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian SI7450DP-T1-GE3 CAD Model

Description

The Vishay SI7450DP-T1-GE3 is an N-channel MOSFET transistor that operates in the -55°C to 150°C temperature range.

  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 3.2A
  • Maximum Rds On at Id,Vgs: 80 mOhm @ 4A, 10V
  • Package: PowerPAK SO-8
  • Mounting Technology: SMD (SMT)
  • Power Dissipation: 1.9W (Ta)
  • Maximum Gate-Source Voltage: ±20V

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Pricing & Ordering

Quantity Unit Price Ext. Price
25+ $2.0527 $51.3175
60+ $1.6843 $101.0580
92+ $1.6316 $150.1072
127+ $1.5790 $200.5330
164+ $1.5264 $250.3296
220+ $1.3685 $301.0700
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 25 pcs
Order Increment : 1 pcs
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