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Same model may have multiple batches, images only for reference.
SI7452DP-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI7452DP-T1-E3

Part No SI7452DP-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 11.5A PPAK SO-8
Datasheet
SI7452DP-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 11.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 160nC @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.9W (Ta)
Maximum Rds On at Id,Vgs 8.3 mOhm @ 19.3A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 064568-SI7452DP-T1-E3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI7452DP-T1-E3 CAD Model

Description

The Vishay MOSFET is a high-performance electronic component designed for various applications.

  • Maximum Power Dissipation: 1.9W
  • Continuous Drain Current: 11.5A @ 25°C
  • Temperature Range: -55°C to 150°C
  • Drain-Source Breakdown Voltage: 60V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds on at Id, Vgs: 8.3 mOhm @ 19.3A, 10V
  • Packaging: PowerPAK SO-8

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