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SI7454DP-T1-GE3

Part No SI7454DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 5A PPAK SO-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 30nC @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.9W (Ta)
Maximum Rds On at Id,Vgs 34 mOhm @ 7.8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 1096167-SI7454DP-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian SI7454DP-T1-GE3 CAD Model

Description

The Vishay SI7454DP-T1-GE3 is an N-channel MOSFET with a drain-source breakdown voltage of 100V and a continuous drain current of 5A at 25°C.

  • Channel Type: N-channel
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 5A @ 25°C
  • Maximum Rds On: 34 mOhm @ 7.8A, 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Power Dissipation: 1.9W (Ta)
  • Temperature Range: -55°C to 150°C (TJ)
  • Case/Package: PowerPAK SO-8
  • Mounting: Surface Mount Device (SMD)
  • Applications: Discrete Semiconductor Applications

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.8408 $58.8560
170+ $0.6907 $117.4190
260+ $0.6687 $173.8620
360+ $0.6468 $232.8480
465+ $0.6260 $291.0900
620+ $0.5613 $348.0060
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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