The Vishay SI7772DP-T1-GE3 is an N-channel MOSFET with a drain-source breakdown voltage of 30V and a continuous drain current of 35.6A (Tc).

• Drain-Source Breakdown Voltage: 30V
• Continuous Drain Current: 35.6A (Tc)
• Power Dissipation: 3.9W (Ta) and 29.8W (Tc)
• Mounting: Surface Mountable
• Case/Package: PowerPAK SO-8
• Gate-Source Threshold Voltage: 2.5V @ 250μA
• Gate-Source Voltage: ±20V (Max)
• Rds On @ Id,Vgs: 13 mOhm @ 15A, 10V (Max)
• Gate Charge: 28nC @ 10V (Max)
• Input Capacitance: 1084pF @ 15V (Max)
• Application: High Current Switching