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SI7774DP-T1-GE3

Part No SI7774DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 60A PPAK SO-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.2V @ 250μA
Max Gate Charge 66nC @ 10V
Max Input Capacitance 2630pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 5W (Ta), 48W (Tc)
Maximum Rds On at Id,Vgs 3.8 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 1096195-SI7774DP-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI7774DP-T1-GE3 CAD Model

Description

The SI7774DP-T1-GE3 is an N-channel MOSFET manufactured by Vishay.

  • Type: Discrete semiconductor product
  • Mounting: Surface-mount device (SMD)
  • Maximum Power Dissipation: 5W (Ta) and 48W (Tc)
  • Drive Voltage: 4.5V (Max Rds On) and 10V (Min Rds On)
  • Status: Obsolete (EOL)
  • Temperature Range: -55°C to 150°C (TJ)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 60A (Tc)
  • Gate-Source Threshold Voltage: 2.2V @ 250μA
  • Maximum Gate Charge: 66nC @ 10V
  • Maximum Rds On @ Id, Vgs: 3.8 mOhm @ 15A, 10V
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.5828 $63.3120
90+ $1.2988 $116.8920
140+ $1.2582 $176.1480
190+ $1.2176 $231.3440
250+ $1.1771 $294.2750
330+ $1.0552 $348.2160
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,000 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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