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Same model may have multiple batches, images only for reference.
SI7862ADP-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI7862ADP-T1-E3

Part No SI7862ADP-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 16V 18A PPAK SO-8 / Trans MOSFET N-CH 16V 18A 8-Pin PowerPAK SO T/R
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Series TrenchFET
Packaging Reel package
Channel Type Type N
Technology MOSFET
Drain Source Voltage 16V
Current - Continuous Drain (Id) @ 25°C 18A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Vgs(th) (Maximum) @ Id 2V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 80nC @ 4.5V
Input Capacitance (Ciss) (Maximum) @ Vds 7340pF @ 8V
Vgs (Maximum) ±8V
Power Dissipation (Maximum) 1.9W (Ta)
Rds On (Maximum) @ Id, Vgs 3 mOhm @ 29A, 4.5V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package PowerPAK SO-8
Package PowerPAK SO-8
Win Source Part Number 794324-SI7862ADP-T1-E3
Popularity Medium
Supply and Demand Status Limited
Family Name Si7862ADP
Introduction Date November 04, 2004
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2022
Ultra Librarian 3D Model Ultra Librarian SI7862ADP-T1-E3 CAD Model

Description

The Vishay SI7862ADP-T1-E3 is a TrenchFET MOSFET transistor designed for high power applications.

  • Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
  • Drain-Source Voltage: 16V
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Gate Charge (Qg) (Maximum) @ Vgs: 80nC @ 4.5V
  • Package: PowerPAK SO-8
  • Mounting: SMD
  • Operating Temperature Range: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.8166 $61.2450
175+ $0.6699 $117.2325
270+ $0.6491 $175.2570
370+ $0.6283 $232.4710
480+ $0.6075 $291.6000
640+ $0.5440 $348.1600
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