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Same model may have multiple batches, images only for reference.
SI7862ADP-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI7862ADP-T1-GE3

Part No SI7862ADP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 16V 18A PPAK SO-8 / Trans MOSFET N-CH 16V 18A 8-Pin PowerPAK SO T/R
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Series TrenchFET
Packaging Reel package
Channel Type Type N
Technology MOSFET
Drain Source Voltage 16V
Current - Continuous Drain (Id) @ 25°C 18A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Vgs(th) (Maximum) @ Id 2V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 80nC @ 4.5V
Input Capacitance (Ciss) (Maximum) @ Vds 7340pF @ 8V
Vgs (Maximum) ±8V
Power Dissipation (Maximum) 1.9W (Ta)
Rds On (Maximum) @ Id, Vgs 3 mOhm @ 29A, 4.5V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package PowerPAK SO-8
Package PowerPAK SO-8
Win Source Part Number 794325-SI7862ADP-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Family Name Si7862ADP
Introduction Date November 04, 2004
ECCN EAR99
Estimated EOL Date 2022
Ultra Librarian 3D Model Ultra Librarian SI7862ADP-T1-GE3 CAD Model

Description

The Vishay Siliconix SI7862ADP-T1-GE3 is a MOSFET transistor that is part of the TrenchFET series.

  • Continuous Drain Current: 18A
  • Maximum Drain-Source Voltage: 16V
  • Gate-Source Threshold Voltage: 2V
  • Maximum Gate-Source Voltage: ±8V
  • Input Capacitance: 7340pF
  • Gate Charge: 80nC

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