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Same model may have multiple batches, images only for reference.
SI7900AEDN-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI7900AEDN-T1-GE3

Part No SI7900AEDN-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 6A PPAK 1212-8
Datasheet
SI7900AEDN-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual) Common Drain
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 6A
Maximum Rds On at Id,Vgs 26 mOhm @ 8.5A, 4.5V
Gate-Source Threshold Voltage 900mV @ 250μA
Max Gate Charge 16nC @ 4.5V
Maximum Power Dissipation 1.5W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK 1212-8 Dual
Win Source Part Number 064580-SI7900AEDN-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI7900AEDN-T1-GE3 CAD Model

Description

The Vishay SI7900AEDN-T1-GE3 is a dual N-channel logic level gate FET designed for surface-mount technology (SMT) mounting.

  • Mounting Type: SMT
  • Packaging: Reel (TR)
  • Temperature Range: -55°C to 150°C
  • Case/Package: PowerPAK 1212-8 Dual
  • Maximum Power Dissipation: 1.5W
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 6A
  • Gate-Source Threshold Voltage: 900mV @ 250μA
  • Max Gate Charge: 16nC @ 4.5V
  • Maximum Rds On @ Id,Vgs: 26 mOhm @ 8.5A, 4.5V

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.7568 $52.9760
165+ $0.6209 $102.4485
250+ $0.6015 $150.3750
345+ $0.5821 $200.8245
445+ $0.5627 $250.4015
595+ $0.5045 $300.1775
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 277 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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