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Same model may have multiple batches, images only for reference.
SI8405DB-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI8405DB-T1-E3

Part No SI8405DB-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 12V 3.6A 2X2 4-MFP
Datasheet
SI8405DB-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 3.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 950mV @ 250μA
Max Gate Charge 21nC @ 4.5V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 1.47W (Ta)
Maximum Rds On at Id,Vgs 55 mOhm @ 1A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 4-Microfoot
Dimension 4-XFBGA, CSPBGA
Win Source Part Number 064586-SI8405DB-T1-E3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI8405DB-T1-E3 CAD Model

Description

The Vishay SI8405DB-T1-E3 is a P-channel MOSFET transistor that is widely used in various electronic devices.

  • Drain-Source Breakdown Voltage: 12V
  • Continuous Drain Current @ 25°C: 3.6A
  • Gate-Source Threshold Voltage: 950mV @ 250μA
  • Gate Charge (Max): 21nC @ 4.5V
  • Rds On @ Id, Vgs (Max): 55 mOhm @ 1A, 4.5V
  • Package: 4-Microfoot 4-XFBGA, CSPBGA package
  • Applications: power management and safety

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.8492 $64.7220
80+ $1.5177 $121.4160
120+ $1.4703 $176.4360
165+ $1.4230 $234.7950
210+ $1.3756 $288.8760
285+ $1.2335 $351.5475
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