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SI8445DB-T2-E1

Part No SI8445DB-T2-E1
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel
Product Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 9.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V
Rds On (Max) @ Id, Vgs 84mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id 850mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16 nC @ 5 V
Vgs (Max) ±5V
Input Capacitance (Ciss) (Max) @ Vds 700 pF @ 10 V
Power Dissipation (Max) 1.8W (Ta), 11.4W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package 4-Microfoot
Package / Case 4-XFBGA, CSPBGA
Base Product Number SI8445
Other Names SI8445DB-T2-E1TR,SI8445DB-T2-E1DKR,SI8445DBT2E1,SI8445DB-T2-E1CT
Standard Package 3,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277546-SI8445DB-T2-E1
Ultra Librarian 3D Model Ultra Librarian SI8445DB-T2-E1 CAD Model

Description

The SI8445DB-T2-E1 is a P-channel MOSFET transistor with a drain to source voltage of 20V and a continuous drain current of 9.8A.

  • Drain to Source Voltage: 20V
  • Continuous Drain Current: 9.8A
  • Package: 4-XFBGA, CSPBGA
  • Gate Charge: 16nC
  • Series: TrenchFET series
  • Status: obsolete
  • Popularity: medium

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