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Same model may have multiple batches, images only for reference.
SI8497DB-T2-E1 Real Image
Same model may have multiple batches, images only for reference.

SI8497DB-T2-E1

Part No SI8497DB-T2-E1
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SI8497DB-T2-E1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2V, 4.5V
Rds On (Max) @ Id, Vgs 53mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 49 nC @ 10 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 1320 pF @ 15 V
Power Dissipation (Max) 2.77W (Ta), 13W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package 6-microfoot
Package / Case 6-UFBGA
Base Product Number SI8497
Other Names SI8497DB-T2-E1DKR,SI8497DB-T2-E1TR,SI8497DBT2E1,SI8497DB-T2-E1CT
Standard Package 3,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277576-SI8497DB-T2-E1
Ultra Librarian 3D Model Ultra Librarian SI8497DB-T2-E1 CAD Model

Description

The Vishay Siliconix SI8497DB-T2-E1 is a P-channel MOSFET (Metal Oxide) electronic component with a trenchFET series.

  • Package: tape and reel
  • Standard package: contains 3,000 units
  • Mounting: SMD (SMT)
  • Temperature range for operating: -55°C to 150°C (TJ)
  • REACH status: unaffected

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.5821 $52.3890
210+ $0.4777 $100.3170
325+ $0.4627 $150.3775
450+ $0.4478 $201.5100
580+ $0.4329 $251.0820
775+ $0.3881 $300.7775
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,682 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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