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Same model may have multiple batches, images only for reference.
SI9407AEY-T1-GE3
Same model may have multiple batches, images only for reference.

SI9407AEY-T1-GE3

Part No SI9407AEY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description P CH MOSFET; Transistor Polarity: P Channel; Continuous Drain Current Id: -3.5A; Drain Source Voltage Vds: -60V; On...
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package SO
Continuous Drain Current (ID) 3.5 A
Drain to Source Resistance 120 mΩ
Drain to Source Voltage (Vdss) -60 V
Element Configuration Single
Gate to Source Voltage (Vgs) 20 V
Maximum Operating Temperature 175 °C
Max Power Dissipation 3 W
Min Operating Temperature -55 °C
Number of Channels 1
Resistance 120 mΩ
RoHS Compliant
Weight 506.605978 mg
Win Source Part Number 1093010-SI9407AEY-T1-GE3
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Vishay
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian SI9407AEY-T1-GE3 CAD Model

Description

This electronic component is a Vishay transistor with a Win Source Part Number of 1093010-SI9407AEY-T1-GE3.

  • Win Source Part Number: 1093010-SI9407AEY-T1-GE3
  • Mounting Style: Surface-mount device (SMD)
  • Drain-to-Source Voltage (Vdss): -60 V
  • Weight: 506.605978 mg
  • Resistance: 120 mΩ
  • Channel: 1
  • Category: Transistors - FETs, MOSFETs - RF
  • Case/Package: SO
  • Maximum Operating Temperature: 175 °C
  • RoHS Compliant: Yes
  • Minimum Operating Temperature: -55 °C
  • Element Configuration: Single
  • Maximum Power Dissipation: 3 W
  • Continuous Drain Current (ID): 3.5 A
  • Drain-to-Source Resistance: 120 mΩ
  • Gate-to-Source Voltage (Vgs): 20 V

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