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Same model may have multiple batches, images only for reference.
SIA813DJ-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIA813DJ-T1-GE3

Part No SIA813DJ-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 4.5A SC70-6
Datasheet
SIA813DJ-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 13nC @ 8V
Max Input Capacitance 355pF @ 10V
Maximum Gate-Source Voltage ±8V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 1.9W (Ta), 6.5W (Tc)
Maximum Rds On at Id,Vgs 94 mOhm @ 2.8A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SC-70-6 Dual
Dimension PowerPAK SC-70-6 Dual
Win Source Part Number 106527-SIA813DJ-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SIA813DJ-T1-GE3 CAD Model

Description

The Vishay 106527-SIA813DJ-T1-GE3 is a MOSFET transistor that features a Schottky diode (isolated).

  • Polarity: P-channel
  • Power Dissipation: Up to 1.9W (Ta), 6.5W (Tc)
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 4.5A (Tc)
  • Temperature Range: -55°C to 150°C (TJ)
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Maximum Gate Charge: 13nC @ 8V

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Pricing & Ordering

Quantity Unit Price Ext. Price
120+ $0.4929 $59.1480
290+ $0.4045 $117.3050
445+ $0.3918 $174.3510
610+ $0.3792 $231.3120
790+ $0.3665 $289.5350
1,055+ $0.3286 $346.6730
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,000 pieces
MOQ: 120 pcs
Order Increment : 1 pcs
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