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Same model may have multiple batches, images only for reference.
SIA913ADJ-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIA913ADJ-T1-GE3

Part No SIA913ADJ-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET P-CH 12V 4.5A 6-Pin PowerPAK SC-70 T/R / MOSFET 2P-CH 12V 4.5A SC70-6
Datasheet
SIA913ADJ-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 4.5A
Maximum Rds On at Id,Vgs 61 mOhm @ 3.6A, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 20nC @ 8V
Max Input Capacitance 590pF @ 6V
Maximum Power Dissipation 6.5W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SC-70-6 Dual
Win Source Part Number 028733-SIA913ADJ-T1-GE3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Family Name SiA913ADJ
Introduction Date February 13, 2009
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date 2022
Ultra Librarian 3D Model Ultra Librarian SIA913ADJ-T1-GE3 CAD Model

Description

The SiA913ADJ-T1-GE3 is a dual 2 P-channel MOSFET designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 6.5W
  • Mounting: PowerPAK SC-70-6 Dual package
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Drain-Source Breakdown Voltage: 12V
  • Continuous Drain Current: 4.5A @ 25°C
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Maximum Gate Charge: 20nC @ 8V
  • Maximum Input Capacitance: 590pF @ 6V
  • Maximum Rds On at Id,Vgs: 61 mOhm @ 3.6A, 4.5V

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Quantity Unit Price Ext. Price
185+ $0.3127 $57.8495
455+ $0.2566 $116.7530
700+ $0.2486 $174.0200
965+ $0.2406 $232.1790
1,245+ $0.2325 $289.4625
1,665+ $0.2085 $347.1525
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Availability: 3,400 pieces
MOQ: 185 pcs
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