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Same model may have multiple batches, images only for reference.
SIA923EDJ-T4-GE3
Same model may have multiple batches, images only for reference.

SIA923EDJ-T4-GE3

Part No SIA923EDJ-T4-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SIA923EDJ-T4-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
FET Type 2 P-Channel (Dual)
FET Feature Standard
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 4.5A (Ta), 4.5A (Tc)
Rds On (Max) @ Id, Vgs 54mOhm @ 3.8A, 4.5V
Vgs(th) (Max) @ Id 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 25nC @ 8V
Power - Max 1.9W (Ta), 7.8W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case PowerPAK® SC-70-6 Dual
Supplier Device Package PowerPAK® SC-70-6 Dual
Base Product Number SIA923
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278478-SIA923EDJ-T4-GE3
Ultra Librarian 3D Model Ultra Librarian SIA923EDJ-T4-GE3 CAD Model

Description

The Vishay Siliconix SIA923EDJ-T4-GE3 is a dual P-channel MOSFET that is part of the TrenchFET series.

  • Drain to Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id): 4.5A (Ta), 4.5A (Tc)
  • Rds On (Max) @ Id, Vgs: 54mOhm @ 3.8A, 4.5V
  • Vgs(th) (Max) @ Id: 1.4V @ 250μA

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Pricing & Ordering

Quantity Unit Price Ext. Price
160+ $0.3714 $59.4240
380+ $0.3048 $115.8240
590+ $0.2954 $174.2860
810+ $0.2857 $231.4170
1,050+ $0.2763 $290.1150
1,400+ $0.2476 $346.6400
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,150 pieces
MOQ: 160 pcs
Order Increment : 1 pcs
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