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Same model may have multiple batches, images only for reference.
SIB411DK-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIB411DK-T1-GE3

Part No SIB411DK-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
Product Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 66mOhm @ 3.3A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 8 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 470 pF @ 10 V
Power Dissipation (Max) 2.4W (Ta), 13W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® SC-75-6
Package / Case PowerPAK® SC-75-6
Base Product Number SIB411
Standard Package 3,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277502-SIB411DK-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SIB411DK-T1-GE3 CAD Model

Description

The Vishay Siliconix SIB411DK-T1-GE3 is an obsolete electronic component that belongs to the category of discrete semiconductor products.

  • Technology: MOSFET (Metal Oxide)
  • FET Type: P-Channel FET
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)

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