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Same model may have multiple batches, images only for reference.
SIE812DF-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SIE812DF-T1-E3

Part No SIE812DF-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 60A 10-POLARPAK
Datasheet
SIE812DF-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 170nC @ 10V
Max Input Capacitance 8300pF @ 20V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 5.2W (Ta), 125W (Tc)
Maximum Rds On at Id,Vgs 2.6 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 10-PolarPAK (L)
Dimension 10-PolarPAK (L)
Win Source Part Number 117358-SIE812DF-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SIE812DF-T1-E3 CAD Model

Description

The Vishay SIE812DF-T1-E3 is an N-channel MOSFET designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 5.2W (Ta) and 125W (Tc)
  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 60A (Tc)
  • Operating Temperature: -55°C to 150°C
  • Package: 10-PolarPAK (L)
  • Maximum Rds On: 2.6 mOhm @ 25A, 10V

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Quantity Unit Price Ext. Price
21+ $2.8509 $59.8689
50+ $2.3393 $116.9650
77+ $2.2661 $174.4897
106+ $2.1930 $232.4580
137+ $2.1200 $290.4400
183+ $1.9007 $347.8281
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