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Same model may have multiple batches, images only for reference.
SIE820DF-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SIE820DF-T1-E3

Part No SIE820DF-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 50A 10-POLARPAK
Datasheet
SIE820DF-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 143nC @ 10V
Max Input Capacitance 4300pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 5.2W (Ta), 104W (Tc)
Maximum Rds On at Id,Vgs 3.5 mOhm @ 18A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 10-PolarPAK (S)
Dimension 10-PolarPAK (S)
Win Source Part Number 101605-SIE820DF-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SIE820DF-T1-E3 CAD Model

Description

The Vishay SIE820DF-T1-E3 is a N-channel MOSFET transistor designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 5.2W (Ta) and 104W (Tc)
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 50A (Tc)
  • Maximum Gate Charge: 143nC @ 10V
  • Maximum Input Capacitance: 4300pF @ 10V
  • Maximum Rds On @ Id,Vgs: 3.5 mOhm @ 18A, 4.5V
  • Package: 10-PolarPAK (S)
  • Operating Temperature: -55°C to 150°C (TJ)
  • Product Status: obsolete (EOL)
  • Manufacturer: Vishay

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