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Same model may have multiple batches, images only for reference.
SIE874DF-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIE874DF-T1-GE3

Part No SIE874DF-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 60A POLARPAK
Datasheet
SIE874DF-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.2V @ 250μA
Max Gate Charge 145nC @ 10V
Max Input Capacitance 6200pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 5.2W (Ta), 125W (Tc)
Maximum Rds On at Id,Vgs 1.17 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 10-PolarPAK (L)
Dimension 10-PolarPAK (L)
Win Source Part Number 064636-SIE874DF-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SIE874DF-T1-GE3 CAD Model

Description

The Vishay 064636-SIE874DF-T1-GE3 MOSFET is a high-quality N-channel component that is suitable for use in various electronic devices.

  • Maximum Power Dissipation (Ta): 5.2W
  • Maximum Power Dissipation (Tc): 125W
  • Continuous Drain Current (Tc): 60A @ 25°C
  • Drive Voltage: 4.5V to 10V
  • Gate-Source Threshold Voltage: 2.2V @ 250μA
  • Maximum Rds On: 1.17 mOhm @ 20A, 10V
  • Package: 10-PolarPAK (L)
  • Drain-Source Breakdown Voltage: 20V
  • Maximum Input Capacitance: 6200pF @ 10V
  • Maximum Gate Charge: 145nC @ 10V
  • Operating Temperature Range (TJ): -55°C to 150°C

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