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Same model may have multiple batches, images only for reference.
SIHA12N60E-E3 Real Image
Same model may have multiple batches, images only for reference.

SIHA12N60E-E3

Part No SIHA12N60E-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 12A TO-220
Datasheet
SIHA12N60E-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 58nC @ 10V
Max Input Capacitance 937pF @ 100V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 33W (Tc)
Maximum Rds On at Id,Vgs 380 mOhm @ 6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220 Full Pack
Dimension TO-220-3 Full Pack
Win Source Part Number 1096404-SIHA12N60E-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SIHA12N60E-E3 CAD Model

Description

The Vishay SIHA12N60E-E3 is a N-channel MOSFET with a maximum drain-source voltage of 600V and continuous drain current of 12A @ 25°C.

  • Application: discrete semiconductor products
  • Power Dissipation: 33W (Tc)
  • Maximum Gate-Source Voltage: ±30V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Rds On @ Id,Vgs: 380 mOhm @ 6A and 10V
  • Package: TO-220 Full Pack
  • Mounting Type: through hole
  • Drive Voltage: 10V
  • Operating Temperature: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
23+ $2.1992 $50.5816
56+ $1.8045 $101.0520
86+ $1.7481 $150.3366
119+ $1.6917 $201.3123
153+ $1.6354 $250.2162
205+ $1.4662 $300.5710
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Availability: 48,000 pieces
MOQ: 23 pcs
Order Increment : 1 pcs
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