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Same model may have multiple batches, images only for reference.
SIHA15N65E-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIHA15N65E-GE3

Part No SIHA15N65E-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SIHA15N65E-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series E
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 280mOhm @ 8A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 96 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2460 pF @ 100 V
Power Dissipation (Max) 34W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220 Full Pack
Package / Case TO-220-3 Full Pack
Base Product Number SIHA15
Standard Package 1,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277732-SIHA15N65E-GE3
Ultra Librarian 3D Model Ultra Librarian SIHA15N65E-GE3 CAD Model

Description

The electronic component with Id 1047463 is a Vishay Siliconix manufactured device with a Win Source Part Number 1277732-SIHA15N65E-GE3.

  • Drain to Source Voltage (Vdss): 650 V
  • Continuous Drain Current (Id): 15A (Tc) @ 25°C
  • Maximum On-State Resistance: 280mOhm @ 8A, 10V
  • Gate Threshold Voltage (Vgs(th)): 4V @ 250μA.29.0095

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $2.0692 $62.0760
70+ $1.6979 $118.8530
110+ $1.6449 $180.9390
150+ $1.5917 $238.7550
190+ $1.5387 $292.3530
255+ $1.3795 $351.7725
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 150 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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