The SIHB16N50C-E3 is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Vishay. It is designed for high-efficiency switching applications, offering low on-resistance (RDS(on)) and fast switching speed. This MOSFET is well-suited for power management circuits, motor control, and other applications requiring efficient power conversion.

Applications

• Switch-mode power supplies (SMPS)
• Uninterruptible power supplies (UPS)
• Motor control
• DC-DC converters
• High-frequency inverters

Features

• N-Channel MOSFET
• 500 V drain-source voltage (VDS)
• 16 A continuous drain current (ID)
• Low on-resistance (RDS(on)): 0.29 Ω at VGS = 10 V
• Fast switching speed
• Avalanche energy rated
• Lead-free and RoHS compliant

Benefits

• High efficiency in switching applications
• Reduces power losses due to low on-resistance
• Enables fast switching speeds, improving overall system performance
• Suitable for high-voltage and high-current applications
• Enhances the reliability and longevity of electronic devices
• Environmentally friendly due to lead-free and RoHS compliance

Additional Details

The SIHB16N50C-E3 has a gate-source voltage (VGS) rating of ±30 V and a maximum power dissipation of 150 W. It is designed to operate within a temperature range of -55°C to +150°C. The device’s low gate charge (Qg) contributes to its fast switching characteristics. It is available in a TO-220AB package. This MOSFET is designed for high-performance applications where efficiency and reliability are critical, such as in server power supplies, electric vehicle charging systems, and industrial power conversion equipment. The avalanche energy rating ensures robustness against voltage spikes and inductive kickback, contributing to the device's overall ruggedness.