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SIHD6N62ET1-GE3

Part No SIHD6N62ET1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series E
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 620 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 900mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 34 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 578 pF @ 100 V
Power Dissipation (Max) 78W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number SIHD6
Other Names SIHD6N62ET1-GE3DKR,SIHD6N62ET1-GE3CT,SIHD6N62ET1-GE3,SIHD6N62ET1-GE3TR
Standard Package 2,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277770-SIHD6N62ET1-GE3
Ultra Librarian 3D Model Ultra Librarian SIHD6N62ET1-GE3 CAD Model

Description

The SIHD6N62ET1-GE3 is a MOSFET transistor from Vishay Siliconix.

  • FET Type: N-channel
  • Maximum Drain to Source Voltage: 620V
  • Continuous Drain Current: 6A (Tc)
  • Maximum Rds On: 900mOhm @ 3A, 10V
  • Gate Charge: 34 nC @ 10V
  • Input Capacitance: 578pF @ 100Vds
  • Maximum Power Dissipation: 78W (Tc)
  • Temperature Range: -55°C to 150°C (TJ)
  • Supplier Device Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Drive Voltage: 10V
  • Status: Obsolete
  • ECCN: EAR99

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $2.9105 $52.3890
42+ $2.3881 $100.3002
65+ $2.3135 $150.3775
90+ $2.2389 $201.5010
116+ $2.1642 $251.0472
155+ $1.9403 $300.7465
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,208 pieces
MOQ: 18 pcs
Order Increment : 1 pcs
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