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SIHD7N60ET4-GE3

Part No SIHD7N60ET4-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series E
Package Tape & Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 600mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 680 pF @ 100 V
Power Dissipation (Max) 78W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number SIHD7
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277768-SIHD7N60ET4-GE3
Ultra Librarian 3D Model Ultra Librarian SIHD7N60ET4-GE3 CAD Model

Description

The SIHD7N60ET4-GE3 is a MOSFET transistor designed for use in discrete semiconductor products.

  • FET Type: N-channel FET
  • Drain to Source Voltage (Vdss): 600 V
  • Continuous Drain Current (Id) @ 25°C: 7A
  • Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V
  • Power Dissipation (Max): 78W (Tc)
  • Temperature Range: -55°C ~ 150°C (TJ)
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier: Vishay Siliconix

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.1642 $52.3890
105+ $0.9553 $100.3065
165+ $0.9254 $152.6910
225+ $0.8956 $201.5100
290+ $0.8657 $251.0530
390+ $0.7762 $302.7180
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,956 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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