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SIHF9540S-GE3

Part No SIHF9540S-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Package Tape & Reel (TR)
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 200mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 61 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1400 pF @ 25 V
Power Dissipation (Max) 150W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package D2PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number SIHF9540
Other Names 742-SIHF9540S-GE3TR
Standard Package 1,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277906-SIHF9540S-GE3
Ultra Librarian 3D Model Ultra Librarian SIHF9540S-GE3 CAD Model

Description

The Vishay Siliconix MOSFET is a P-Channel transistor designed for use in electronic circuits.

  • Drain to Source Voltage: 100 V
  • Continuous Drain Current: 19A (Tc)
  • Rds On (Max) @ Id, Vgs: 200mOhm @ 11A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Power Dissipation: 150W (Tc)
  • Package: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Standard Package: 1,000
  • ECCN: EAR99
  • HTSUS: 8541.29.0095

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