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SIHFPS38N60L-GE3

Part No SIHFPS38N60L-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description POWER MOSFET SUPER-247, 150 M @ / N-Channel 600 V 38A (Tc) 540W (Tc) Through Hole SUPER-247™ (TO-274AA)
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 150mOhm @ 23A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 320 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 7990 pF @ 25 V
Power Dissipation (Max) 540W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package SUPER-247™ (TO-274AA)
Package / Case TO-274AA
MSL Level Not Applicable
ECCN EAR99
HTSUS 8541.29.0095
Other Names 742-SIHFPS38N60L-GE3
Standard Package 30
Win Source Part Number 1041525-SIHFPS38N60L-GE3
Ultra Librarian 3D Model Ultra Librarian SIHFPS38N60L-GE3 CAD Model

Description

The Vishay Siliconix SIHFPS38N60L-GE3 is an N-channel MOSFET with a maximum drain to source voltage rating of 600V and a continuous drain current rating of 38A at 25°C.

  • Maximum Drain to Source Voltage: 600V
  • Continuous Drain Current: 38A @ 25°C
  • Rds On (Max): 150mOhm @ 23A, 10V
  • Gate Charge (Qg) (Max): 320 nC @ 10 V
  • Package: TO-274AA
  • Temperature Range: -55°C to 150°C
  • Ideal for: Use in discrete semiconductor products

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $34.4093 $68.8186
5+ $28.2333 $141.1665
7+ $27.3511 $191.4577
9+ $26.4688 $238.2192
12+ $25.5865 $307.0380
16+ $22.9396 $367.0336
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 430 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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