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SiHFR024

Part No SiHFR024
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description Power MOSFET
Sample
Rohs State rohs
ECAD Module
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Manufacturer Vishay
Win Source Part Number 1249834-SiHFR024
Manufacturer Homepage www.vishay.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SiHFR024 CAD Model

Description

The SiHFR024 is an N-Channel MOSFET from Vishay Siliconix, designed for high-frequency switching applications. This MOSFET features a low on-resistance (RDS(on)) and gate charge, enabling efficient power conversion and minimal switching losses. It is commonly used in synchronous rectification, DC-DC converters, and power management circuits.

Applications

  • Synchronous Rectification
  • DC-DC Converters
  • Power Management in Portable Devices
  • High-Frequency Switching Applications
  • Motor Control

Features

  • Low RDS(on): Minimizes conduction losses and improves efficiency.
  • Low Gate Charge: Reduces switching losses and improves high-frequency performance.
  • Fast Switching Speed: Enables efficient operation in high-frequency applications.
  • Avalanche Rated: Provides robustness and reliability in demanding applications.
  • Lead (Pb)-free and RoHS Compliant: Environmentally friendly.

Benefits

  • High Efficiency: Low RDS(on) and gate charge contribute to efficient power conversion.
  • Improved Thermal Performance: Reduces heat generation and enhances reliability.
  • Compact Design: Available in a small surface-mount package for space-constrained applications.
  • Reliable Operation: Avalanche rating ensures robustness and longevity.
  • Environmentally Compliant: Meets RoHS standards for environmental protection.

Additional Details

The SiHFR024 boasts a typical RDS(on) of around 2.4 milliohms at a gate-source voltage of 10V, which significantly reduces conduction losses compared to MOSFETs with higher on-resistance. Its low gate charge allows for faster switching speeds, minimizing switching losses and enabling efficient operation at high frequencies. The device is typically packaged in a PowerPAK SO-8, which offers excellent thermal performance and is suitable for surface-mount assembly. The drain-source voltage (VDS) rating is typically 25V. This MOSFET is particularly well-suited for applications where efficiency and thermal management are critical. It is also beneficial in battery-powered devices to maximize battery life. The fast switching characteristics also make it suitable for use in class-D audio amplifiers. The SiHFR024 is designed to operate over a wide temperature range, ensuring reliable performance in various environments. By using the SiHFR024, designers can achieve high efficiency, compact design, and reliable operation in their power conversion circuits.

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