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Same model may have multiple batches, images only for reference.
SIHFR430ATRL-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIHFR430ATRL-GE3

Part No SIHFR430ATRL-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SIHFR430ATRL-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Package Tape & Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.7Ohm @ 3A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 490 pF @ 25 V
Power Dissipation (Max) 110W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number SIHFR430
Other Names 742-SIHFR430ATRL-GE3TR
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277916-SIHFR430ATRL-GE3
Ultra Librarian 3D Model Ultra Librarian SIHFR430ATRL-GE3 CAD Model

Description

The SIHFR430ATRL-GE3 is an N-channel MOSFET transistor that features a drain to source voltage of 500 V and continuous drain current of 5A.

  • Maximum Rds On: 1.7Ohm @ 3A and 10V Vgs
  • Gate Charge (Qg): 24 nC @ 10 Vgs
  • Input Capacitance (Ciss): 490 pF @ 25 Vds
  • Maximum Vgs: +/-30V
  • Operating Temperature Range: -55°C to 150°C
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplied by: Vishay Siliconix
  • Ideal for: Use in various applications such as power management, motor control, and lighting.

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