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Same model may have multiple batches, images only for reference.
SIHFR9014-GE3 Vishay
Same model may have multiple batches, images only for reference.

SIHFR9014-GE3

Part No SIHFR9014-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 60V 5.1A DPAK / P-Channel 60 V 5.1A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount TO-252AA
Datasheet
SIHFR9014-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Package Tape & Reel (TR)
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 5.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 500mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 270 pF @ 25 V
Power Dissipation (Max) 2.5W (Ta), 25W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number SIHFR9014
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names 742-SIHFR9014-GE3TR
Standard Package 3,000
Win Source Part Number 1093058-SIHFR9014-GE3
Ultra Librarian 3D Model Ultra Librarian SIHFR9014-GE3 CAD Model

Description

The SIHFR9014-GE3 is a P-channel MOSFET transistor from Vishay Siliconix.

  • Manufacturer: Vishay Siliconix
  • Channel Type: P-channel
  • Mounting: SMD (SMT)
  • Drain to Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 5.1A (Tc) @ 25°C
  • Maximum On-Resistance (Rds On): 500mOhm @ 3.1A and 10V gate to source voltage (Vgs)
  • Gate Threshold Voltage (Vgs(th)): 4V @ 250µA
  • Power Dissipation: 2.5W (Ta) and 25W (Tc)
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Temperature Range: -55°C to 150°C (TJ)
  • ECCN: EAR99

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