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Same model may have multiple batches, images only for reference.
SIHG065N60E-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIHG065N60E-GE3

Part No SIHG065N60E-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SIHG065N60E-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series E
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 65mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 74 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2700 pF @ 100 V
Power Dissipation (Max) 250W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247AC
Package / Case TO-247-3
Base Product Number SIHG065
Standard Package 25
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277748-SIHG065N60E-GE3
Ultra Librarian 3D Model Ultra Librarian SIHG065N60E-GE3 CAD Model

Description

The SIHG065N60E-GE3 is an N-channel MOSFET transistor with a drain-to-source voltage (Vdss) of 600 V and a continuous drain current (Id) of 40A (Tc) @ 25°C.

  • Rds On (Max) @ Id, Vgs: 65mOhm @ 16A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V
  • Vgs(th) (Max) @ Id: 5V @ 250μA
  • Power Dissipation (Max): 250W (Tc)
  • Package/Case: TO-247-3
  • Supplier Device Package: TO-247AC
  • Temperature Range for Operation: -55°C to 150°C (TJ)
  • ECCN: EAR99

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