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Same model may have multiple batches, images only for reference.
SIHG22N60E-E3 Real Image
Same model may have multiple batches, images only for reference.

SIHG22N60E-E3

Part No SIHG22N60E-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 21A TO247AC / Trans MOSFET N-CH 600V 21A 3-Pin(3+Tab) TO-247AC
Datasheet
SIHG22N60E-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 600V
Current - Continuous Drain (Id) @ 25°C 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 86nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 1920pF @ 100V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 227W (Tc)
Rds On (Maximum) @ Id, Vgs 180 mOhm @ 11A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-247AC
Package TO-247-3
Win Source Part Number 794397-SIHG22N60E-E3
Popularity Medium
Supply and Demand Status Limited
Family Name SiHG22N60E
Introduction Date September 26, 2011
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian SIHG22N60E-E3 CAD Model

Description

The Vishay Siliconix SiHG22N60E-E3 is a Vishay Siliconix MOSFET transistor.

  • Continuous Drain Current: Up to 21A
  • Temperature Range: -55°C to 150°C
  • Drain-Source Voltage: 600V
  • Gate-Source Voltage: ±30V
  • Gate Charge: 86nC @ 10V
  • Rds On: 180mOhm @ 11A @ 10V
  • Package: TO-247-3

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