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SIHG61N65EF-GE3

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This model is a standard, industry-grade component frequently used in electronic manufacturing.

Part No	SIHG61N65EF-GE3
Manufacturer	Vishay
Catalog	Transistors - FETs, MOSFETs - RF
Datasheet	SIHG61N65EF-GE3 Datasheet
Sample
Rohs State
ECAD Module
	Add to BOM List New List Existing List This product has been added to your list. List name
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Products specifications Report Issue?

Category	Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr	Vishay Siliconix
Series	E
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	64A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	47mOhm @ 30.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	371 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	7407 pF @ 100 V
Power Dissipation (Max)	520W (Tc)
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247AC
Package / Case	TO-247-3
Base Product Number	SIHG61
Standard Package	500
MSL Level	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Win Source Part Number	1277735-SIHG61N65EF-GE3
Ultra Librarian 3D Model	Ultra Librarian SIHG61N65EF-GE3 CAD Model

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Description

The SIHG61N65EF-GE3 is an N-channel MOSFET transistor from Vishay Siliconix.

Drain-to-Source Voltage (Vdss): 650V
Continuous Drain Current (Id) @ 25°C: 64A (Tc)
Maximum On-Resistance (Rds On) @ Id, Vgs: 47mOhm @ 30.5A, 10V
Maximum Gate-Source Voltage (Vgs(th)) @ Id: 4V @ 250μA
Maximum Power Dissipation (Max): 520W (Tc)
Package Type: Through-Hole
Package/Case Type: TO-247-3
Supplier Device Package: TO-247AC
Maximum Gate Charge (Qg) @ Vgs: 371nC @ 10V
Input Capacitance (Ciss) @ Vds: 7407pF @ 100V
Maximum Vgs: ±30V
Temperature Range for Operating: -55°C to 150°C (TJ)

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