The Vishay Siliconix 1277927-SIHH24N65E-T1-GE3 is a MOSFET N-channel transistor that comes in a tape and reel package with 3000 standard packages.

• Mounting Type: Surface-mount
• Drain to Source Voltage (Vdss): 650V
• Continuous Drain Current (Id) @ 25°C: 23A
• Rds on (Max) @ Id, Vgs: 150mOhm @ Id, Vgs and 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Power Dissipation (Max): 202W (Tc)
• Package/Case: 8-PowerTDFN
• Supplier Device Package: PowerPAK® 8 x 8
• Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2814 pF @ 100 V
• Operating Temperature Range: -55°C to 150°C (TJ)
• ECCN: EAR99
• MSL Level: 1 (Unlimited)
• HTSUS: 8541.29.0095