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Same model may have multiple batches, images only for reference.
SIHP12N60E-E3 Real Image
Same model may have multiple batches, images only for reference.

SIHP12N60E-E3

Part No SIHP12N60E-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 12A TO220AB
Datasheet
SIHP12N60E-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Bulk
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 58nC @ 10V
Max Input Capacitance 937pF @ 100V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 147W (Tc)
Maximum Rds On at Id,Vgs 380 mOhm @ 6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3 Full Pack
Win Source Part Number 211707-SIHP12N60E-E3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SIHP12N60E-E3 CAD Model

Description

The Vishay SIHP12N60E-E3 is a through-hole N-channel MOSFET transistor used in various discrete semiconductor products.

  • Maximum Power Dissipation: 147W
  • Continuous Drain Current: 12A
  • Rds On: 380mOhm
  • Gate-Source Threshold Voltage: 4V
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Input Capacitance: 937pF
  • Manufacturer: Vishay
  • Packaging: TO-220AB
  • Supply and Demand Status: limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
135+ $0.4368 $58.9680
325+ $0.3585 $116.5125
500+ $0.3473 $173.6500
690+ $0.3361 $231.9090
890+ $0.3249 $289.1610
1,190+ $0.2913 $346.6470
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,500 pieces
MOQ: 135 pcs
Order Increment : 1 pcs
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