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Same model may have multiple batches, images only for reference.
SIHP12N60E-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIHP12N60E-GE3

Part No SIHP12N60E-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 12A TO220AB
Datasheet
SIHP12N60E-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 58nC @ 10V
Max Input Capacitance 937pF @ 100V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 147W (Tc)
Maximum Rds On at Id,Vgs 380 mOhm @ 6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 211708-SIHP12N60E-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SIHP12N60E-GE3 CAD Model

Description

This Vishay electronic component is a MOSFET with a drain-source breakdown voltage of 600V and a continuous drain current of 12A (Tc).

  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current (Tc): 12A
  • Maximum Rds On: 380 mOhm @ 6A, 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Power Dissipation (Max): 147W (Tc)
  • Operating Temperature Range (TJ): -55°C to 150°C
  • Package: TO-220AB

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Pricing & Ordering

Quantity Unit Price Ext. Price
9+ $5.6291 $50.6619
22+ $4.6187 $101.6114
34+ $4.4744 $152.1296
47+ $4.3300 $203.5100
60+ $4.1857 $251.1420
80+ $3.7527 $300.2160
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,000 pieces
MOQ: 9 pcs
Order Increment : 1 pcs
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