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SIHP14N50D-E3

Name: SIHP14N50D-E3
Brand: Vishay
SKU: 1277891
Availability: InStock
Rating: 4.93 (5 reviews)

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Part No	SIHP14N50D-E3
Manufacturer	Vishay
Catalog	Transistors - FETs, MOSFETs - RF
Datasheet	SIHP14N50D-E3 Datasheet
Sample
Rohs State
ECAD Module
	Add to BOM List New List Existing List This product has been added to your list. List name
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Products specifications Report Issue?

Category	Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr	Vishay Siliconix
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500 V
Current - Continuous Drain (Id) @ 25°C	14A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	400mOhm @ 7A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	58 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1144 pF @ 100 V
Power Dissipation (Max)	208W (Tc)
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package / Case	TO-220-3
Base Product Number	SIHP14
Other Names	SIHP14N50DE3
Standard Package	1,000
MSL Level	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Win Source Part Number	1277891-SIHP14N50D-E3
Ultra Librarian 3D Model	Ultra Librarian SIHP14N50D-E3 CAD Model

Alternative Products

Description

The Vishay Siliconix SIHP14N50D-E3 is a MOSFET that is designed for use in various electronic devices.

Type: N-channel FET
Maximum Drain to Source Voltage: 500V
Continuous Drain Current: 14A @ 25°C
Maximum Rds On: 400mOhm @ 7A and 10V
Gate Charge: 58 nC @ 10V
Input Capacitance: 1144 pF @ 100V
Mounting Type: Through-hole
Package/Case: TO-220-3
Power Dissipation: 208W @ Tc
Family: SIHP14
Compliance: ECCN and HTSUS standards

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